Modification of WS₂thin film properties using high dose gamma irradiation

The tunability of the transition metal dichalcogenide properties has gained attention from numerous researchers due to their wide application in various fields including quantum technology. In the present work, WS₂has been deposited on fluorine doped tin oxide substrate and its properties have been studied systematically. These samples were irradiated using gamma radiation for various doses, and the effect on structural, morphological, optical and electrical properties has been reported. The crystallinity of the material is observed to be decreased, and the results are well supported by x-ray diffraction, Raman spectroscopy techniques. The increase in grain boundaries has been supported by the agglomeration observed in the scanning electron microscopy micrographs. The XPS results of WS₂after gamma irradiation show evolution of oxygen, carbon, C=O, W-O and SO₄^-2peaks, confirming the addition of impurities and formation of point defect. The gamma irradiation creates point defects, and their density increases considerably with increasing gamma dosage. These defects crucially altered the structural, optical and electrical properties of the material. The reduction in the optical band gap with increased gamma irradiation is evident from the absorption spectra and respective Tauc plots. TheI-Vgraphs show a 1000-fold increase in the saturation current after 100 kGy gamma irradiation dose. This work has explored the gamma irradiation effect on the WS₂and suggests substantial modification in the material and enhancement in electrical properties.