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Giant impurity effect on anomalous Hall effect of Mn3Sn
Rikizo Yano1, Shunya Kihara1, Masayasu Yoneda1
1Department of Applied Physics, Nagoya University, Nagoya, Aichi 464-8603, Japan.
The Journal of Chemical Physics
|May 13, 2024
Summary
Whisker Mn3Sn crystals show a non-hysteretic anomalous Hall effect (AHE) at low temperatures when coated with ferromagnetic Mn2-xSn. This effect is induced at the interface, opening new avenues for tailoring AHE. Keywords: Mn3Sn, anomalous Hall effect, antiferromagnet, interface, magnetic proximity effect.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Magnetism
Background:
- Mn3Sn is an antiferromagnetic (AFM) material known for its anomalous Hall effect (AHE) at room temperature.
- The AHE in Mn3Sn typically exhibits hysteresis in its antiferromagnetic phase due to spin alignment.
Purpose of the Study:
- To investigate the anomalous Hall effect (AHE) in Mn3Sn crystals modified by a ferromagnetic layer.
- To explore the influence of magnetic proximity effect on the AHE and spin structure of Mn3Sn.
Main Methods:
- Growth of whisker Mn3Sn crystals using the flux method.
- Coating Mn3Sn crystals with a thin layer of ferromagnetic Mn2-xSn.
- Temperature-dependent measurements of the anomalous Hall effect.
Main Results:
- Whisker Mn3Sn crystals coated with Mn2-xSn exhibit a non-hysteretic AHE at mid-to-low temperatures (100-200 K).
- Above 275 K, the AHE is hysteretic, consistent with the inverse triangular lattice spin alignment.
- A spiral AFM spin structure is observed at 100-200 K, correlating with the non-hysteretic AHE.
Conclusions:
- The non-hysteretic AHE is induced at the interface between Mn2-xSn and Mn3Sn.
- Scalar-spin chirality in the spiral AFM phase, modulated by Mn2-xSn via magnetic proximity effect, is responsible for the AHE.
- This finding provides a new strategy for controlling the AHE using adjacent magnetic layers.
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