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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Tailoring amorphous boron nitride for high-performance two-dimensional electronics.

Cindy Y Chen¹, Zheng Sun², Riccardo Torsi¹

¹Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.

Nature Communications

|May 13, 2024

Summary

This summary is machine-generated.

We developed a low-temperature atomic layer deposition process to create uniform amorphous boron nitride (aBN) dielectric films on 2D materials. This scalable method enhances the performance of 2D electronic devices.

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Area of Science:

Materials Science
Nanotechnology
Solid State Physics

Background:

Two-dimensional (2D) materials possess unique electronic and optoelectronic properties crucial for next-generation devices.
Achieving high performance in 2D material devices is hindered by challenges in forming uniform dielectric layers and preventing interfacial defects.
Precise control over the dielectric environment is essential for unlocking the full potential of 2D materials.

Purpose of the Study:

To demonstrate a scalable, low-temperature atomic layer deposition (ALD) process for synthesizing uniform amorphous boron nitride (aBN) thin films on 2D materials.
To evaluate the impact of aBN dielectric layers on the electronic and optoelectronic properties of molybdenum disulfide (MoS2) based devices.
To overcome the limitations of current dielectric integration methods for 2D materials.

Main Methods:

Utilized atomic layer deposition (ALD) at low temperatures (<250°C) to synthesize amorphous boron nitride (aBN) thin films.
Employed a seed-free ALD approach to achieve uniform and conformal aBN dielectric layers on 2D material surfaces.
Fabricated multiple quantum well structures and double-gated monolayer MoS2 field-effect transistors with aBN dielectrics.

Main Results:

Achieved wafer-scale synthesis of uniform, conformal aBN thin films with high oxidative stability.
Demonstrated excellent dielectric strength of 8.2 MV/cm for the synthesized aBN films.
Showcased the successful integration of aBN dielectrics in MoS2-based devices, enabling evaluation of their optoelectronic and electronic properties.

Conclusions:

The developed low-temperature, seed-free ALD process enables scalable integration of high-quality aBN dielectrics for 2D materials.
This advancement addresses critical challenges in dielectric integration, paving the way for improved 2D material device performance.
The findings facilitate the realization of theoretical performance limits in next-generation 2D electronics and photonics.