The effects of intra-detector Compton scatter on low-frequency DQE for photon-counting CT using edge-on-irradiated...

Edge-on-irradiated silicon detectors are currently being investigated for use in full-body photon-counting computed tomography (CT) applications. The low atomic number of silicon leads to a significant number of incident photons being Compton scattered in the detector, depositing a part of their energy and potentially being counted multiple times. Even though the physics of Compton scatter is well established, the effects of Compton interactions in the detector on image quality for an edge-on-irradiated silicon detector have still not been thoroughly investigated.

To investigate and explain effects of Compton scatter on low-frequency detective quantum efficiency (DQE) for photon-counting CT using edge-on-irradiated silicon detectors.

We extend an existing Monte Carlo model of an edge-on-irradiated silicon detector with 60 mm active absorption depth, previously used to evaluate spatial-frequency-based performance, to develop projection and image domain performance metrics for pure density and pure spectral imaging tasks with 30 and 40 cm water backgrounds. We show that the lowest energy threshold of the detector can be used as an effective discriminator of primary counts and cross-talk caused by Compton scatter. We study the developed metrics as functions of the lowest threshold energy for root-mean-square electronic noise levels of 0.8, 1.6, and 3.2 keV, where the intermediate level 1.6 keV corresponds to the noise level previously measured on a single sensor element in isolation. We also compare the performance of a modeled detector with 8, 4, and 2 optimized energy bins to a detector with 1-keV-wide bins.

In terms of low-frequency DQE for density imaging, there is a tradeoff between using a threshold low enough to capture Compton interactions and avoiding electronic noise counts. For 30 cm water phantom, 4 energy bins, and a root-mean-square electronic noise of 0.8, 1.6, and 3.2 keV, it is optimal to put the lowest energy threshold at 3, 6, and 1 keV, which gives optimal projection-domain DQEs of 0.64, 0.59, and 0.52, respectively. Low-frequency DQE for spectral imaging also benefits from measuring Compton interactions with respective optimal thresholds of 12, 12, and 13 keV. No large dependence on background thickness was observed. For the intermediate noise level (1.6 keV), increasing the lowest threshold from 5 to 35 keV increases the variance in a iodine basis image by 60%-62% (30 cm phantom) and 67%-69% (40 cm phantom), with 8 bins. Both spectral and density DQE are adversely affected by increasing the electronic noise level. Image-domain DQE exhibits similar qualitative behavior as projection-domain DQE.

Compton interactions contribute significantly to the density imaging performance of edge-on-irradiated silicon detectors. With the studied detector topology, the benefit of counting primary Compton interactions outweighs the penalty of multiple counting at all lowest threshold energies. Compton interactions also contribute significantly to the spectral imaging performance for measured energies above 10 keV.