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Related Experiment Video

Updated: May 7, 2026

Quantum State Engineering of Light with Continuous-wave Optical Parametric Oscillators
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A Bi-CMOS electronic photonic integrated circuit quantum light detector.

Joel F Tasker1, Jonathan Frazer1, Giacomo Ferranti1

  • 1Quantum Engineering Technology Labs, H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK.

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|May 17, 2024
PubMed
Summary

We developed a compact, quantum noise-limited homodyne detector using monolithic electronic-photonic integration. This integrated quantum technology significantly enhances detector performance and bandwidth for advanced applications.

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Area of Science:

  • Quantum Technology
  • Integrated Photonics
  • Semiconductor Devices

Background:

  • Quantum noise-limited homodyne detectors are crucial for quantum technologies.
  • Current detectors often involve separate photonic and electronic components, limiting performance.
  • Complimentary metal-oxide semiconductor (CMOS) integration offers manufacturing advantages for quantum devices.

Purpose of the Study:

  • To report a novel quantum noise-limited monolithic electronic-photonic integrated homodyne detector.
  • To demonstrate the performance benefits of integrating photonic and electronic components on a single chip.
  • To showcase the potential of CMOS integration for scalable quantum technology.

Main Methods:

  • Fabrication of a monolithic electronic-photonic integrated homodyne detector using a 250-nm lithography bipolar CMOS process.
  • Characterization of the detector's bandwidth and shot noise clearance.
  • Measurement of performance with a 9-dBm power local oscillator.

Main Results:

  • Achieved a 15.3-gigahertz 3-decibel bandwidth.
  • Measured a maximum shot noise clearance of 12 decibels.
  • Demonstrated shot noise clearance extending to 26.5 gigahertz.

Conclusions:

  • Monolithic electronic-photonic integration enables quantum detectors to surpass the performance of discrete component systems.
  • The developed detector's small footprint (80 µm x 220 µm) and high performance are attributed to integrated design.
  • This work highlights the significant enhancement of quantum photonic device performance through electronic-photonic integration.