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A Zero-Voltage-Writing Artificial Nervous System Based on Biosensor Integrated on Ferroelectric Tunnel Junction

Xiaokun Qin1,2, Bowen Zhong1,2, Shuxian Lv3

  • 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

Advanced Materials (Deerfield Beach, Fla.)
|May 19, 2024
PubMed
Summary

This study introduces a zero-voltage-writing artificial nervous system (ZANS) that uses bio-signals for both sensing and power. This innovation enables self-powered, bionic systems for applications like prosthetics.

Keywords:
artificial nervous systembiocompatibilitybiosensorferroelectric tunnel junctionzero‐voltage‐writing

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