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Ultrathin Sn-doped Ga2O3 for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric
Zi-Chun Liu1, Jia-Cheng Li1, Hui-Xia Yang1
1School of Integrated Circuits and Electronics and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China.
Science Bulletin
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Abstract
No abstract available in PubMed .

