CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology.

Area of Science:

• Semiconductor Device Physics
• Materials Science
• Electrical Engineering

Background:

• Moore's Law and the International Technology Roadmap for Semiconductors (ITRS) are nearing their limits for traditional complementary metal oxide semiconductor (CMOS) architectures.
• Scaling challenges, particularly short channel effects (SCEs), hinder further miniaturization of transistors.
• The need for advanced transistor designs is critical for continued progress in electronics.

Purpose of the Study:

• To review emerging transistor designs beyond current CMOS technology.
• To explore solutions for scaling down to and beyond the 5 nm technology node.
• To discuss the integration of electronics and photonics, simulation methods, and processing challenges.

Main Methods:

• Review of current literature on advanced transistor architectures.
• Analysis of gate-all-around (GAA) transistors for overcoming SCEs.
• Discussion of fully depleted silicon-on-insulator (FDSOI) and tunneling field-effect transistors (TFETs) for low-power applications.
• Exploration of simulation techniques and metrology for device characterization.

Main Results:

• Gate-all-around (GAA) transistors show promise for scaling beyond 5 nm by mitigating short channel effects.
• Fully depleted SOI (FDSOI) and tunneling field-effect transistors (TFETs) offer potential for low-power electronics.
• Innovative processing and metrology techniques are essential for fabricating and characterizing next-generation devices.
• Integration of electronics and photonics is a key area for future development.

Conclusions:

• The end of Moore's Law necessitates the exploration of novel transistor designs like GAA, FDSOI, and TFETs.
• Advanced device architectures are crucial for overcoming scaling limitations and enabling future electronic systems.
• Successful implementation requires addressing significant challenges in device processing, design, and characterization using advanced metrology.