Related Experiment Video
Updated: Aug 11, 2026

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
Published on: June 23, 2017
Design, Fabrication, and Characterization of a Planar Three-Electrode Trigger Switch Based on Flexible Printed
Pengfei Xue1, Peng Xiong1, Heng Hu1
1State Key Laboratory of Explosion Science and Technology, School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, China.
Abstract:
An exploding foil initiator system (EFIs) is essential in modern weaponry for its safety and reliability. As the main component of EFIs, the performance of the switch is critical to EFIs. In this study, a planar three-electrode trigger switch was designed and fabricated using the Flexible Printed Circuits (FPC) process. Subsequently, the performance of the FPC switch was tested. The results show that the self-breakdown voltage of the FPC switch is stable. In addition, an FPF switch with a 0.6 mm main electrode gap demonstrated consistency, with delay times below 31.75 ns, and a jitter ranging from 1.7 ns to 10.94 ns at 900 V to 1200 V, evidencing the FPC switches' reliability and uniform performance across various voltages. Compared to the Micro-Electro-Mechanical Systems (MEMS) switches of similar dimensions, the FPC switches achieved a faster high-current attainment with less inductance, showing a 5% reduction in loop inductance. The repetitive testing results demonstrate that the FPC switch maintains consistent output performance, with stable peak currents, peak current time, and delay time over 50 action cycles, highlighting its repeatability. The FPC switch was assembled with an EFI chip and capacitor into an integrated system, which was subsequently able to successfully detonate HNS-IV at 1000 V/0.22 μF, proving the FPC switch's potential in low inductance applications.
Related Concept Videos
Bipolar Junction Transistor
The structure...
Switching of BJT
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

