2 in. Bulk β-Ga₂O₃ Single Crystals Grown by EFG Method with High Wafer-Scale Quality

2 in. bulk β-Ga₂O₃ single crystals are successfully grown by the edge-defined film-fed growth method with a homemade furnace system. By considering the significance of wafer quality in future mass manufacture, a nine-point characterization method is developed to evaluate the full-scale quality of the processed 2 in. (100)-orientated β-Ga₂O₃ single-crystal wafers. Crystalline and structural characteristics were evaluated using X-ray diffraction and Raman spectroscopy, revealing decent crystalline quality with a mean full width at half-maximum value of 60.8 arcsec and homogeneous bonding structures. The statistical root-mean-square surface roughness, determined from nine scanning areas, was found to be only 0.196 nm, indicating superior surface quality. Linear optical properties and defect levels were further investigated using UV-visible spectrophotometry and photoluminescence spectroscopy. The high wafer-scale quality of the processed β-Ga₂O₃ wafers meets the requirements for homoepitaxial growth substrates in electronic and photonic devices with vertical configurations.