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Updated: May 12, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Programmable quantum emitter formation in silicon.

K Jhuria¹, V Ivanov^2,3, D Polley^4,5

¹Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA. kaushalya@lbl.gov.

Nature Communications

|May 27, 2024

Summary

This summary is machine-generated.

We demonstrate precise control over silicon quantum emitters using laser pulses and hydrogen. This allows for selective writing and erasing of light-emitting defects for advanced qubit integration.

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Last Updated: May 12, 2026

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Area of Science:

Quantum computing
Materials science
Optoelectronics

Background:

Silicon quantum emitters are promising for scalable qubit integration.
Defect control is crucial for reliable quantum device fabrication.
Existing methods lack single-center precision for defect manipulation.

Purpose of the Study:

To demonstrate local, programmable control over quantum emitter formation in silicon.
To investigate hydrogen's role in activating and passivating specific defects.
To enhance the brightness and properties of selected quantum emitters.

Main Methods:

Utilizing femtosecond laser pulses for localized defect modification.
Employing hydrogen-based annealing for defect activation and passivation.
Carbon implantation and thermal annealing to create specific defect centers.
Density functional theory (DFT) calculations to model defect behavior.

Main Results:

Achieved selective writing and erasing of light-emitting defects at the single-center level.
Demonstrated programmable formation of T and C_i centers while passivating G-centers.
Observed significant brightness enhancement of C_i centers with hydrogen presence via DFT.
Fs-laser pulses enable local hydrogen control for emitter manipulation.

Conclusions:

Local hydrogen control via fs-laser pulses offers a pathway for programmable quantum emitter arrays.
The C_i center, enhanced by hydrogen, is a viable telecom S-band quantum emitter.
This technique advances silicon-based quantum technologies towards large-scale integration.