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Updated: Jun 25, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Crystal structure, properties and pressure-induced insulator-metal transition in layered kagome chalcogenides
Hong Du1, Yu Zheng1, Cuiying Pei2
1Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 201210, People's Republic of China.
Abstract:
Layered materials with kagome lattice have attracted a lot of attention due to the presence of nontrivial topological bands and correlated electronic states with tunability. In this work, we investigate a unique van der Waals (vdW) material system,A2M3X4(A= K, Rb, Cs;M= Ni, Pd;X= S, Se), where transition metal kagome lattices, chalcogen honeycomb lattices and alkali metal triangular lattices coexist simultaneously. A notable feature of this material is that each Ni/Pd atom is positioned in the center of four chalcogen atoms, forming a local square-planar environment. This crystal field environment results in a low spin stateS= 0 of Ni2+/Pd2+. A systematic study of the crystal growth, crystal structure, magnetic and transport properties of two representative compounds, Rb2Ni3S4and Cs2Ni3Se4, has been carried out on powder and single crystal samples. Both compounds exhibit nonmagneticp-type semiconducting behavior, closely related to the particular chemical environment of Ni2+ions and the alkali metal intercalated vdW structure. Additionally, Cs2Ni3Se4undergoes an insulator-metal transition (IMT) in transport measurements under pressure up to 87.1 GPa without any structural phase transition, while Rb2Ni3S4shows the tendency to be metalized.
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