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Related Experiment Video

Updated: Jun 24, 2025

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

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Published on: April 4, 2017

Highly efficient silicon modulator via a slow-wave Michelson structure.

Jianing Wang, Xi Wang, Jian Li

|June 2, 2024

Summary

Researchers developed a novel silicon modulator for low-power applications, achieving record modulation efficiency and high bandwidth. This breakthrough enhances silicon photonics for emerging 2-μm waveband applications.

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Area of Science:

Photonics and Optical Engineering
Semiconductor Device Physics

Background:

Free carrier dispersion in silicon modulators limits low-power applications.
Balancing modulation efficiency and bandwidth remains a key challenge in silicon modulator design.

Purpose of the Study:

To demonstrate a novel slow-wave Michelson silicon modulator structure.
To enhance modulation efficiency and bandwidth for emerging 2-μm waveband applications.

Main Methods:

Designed a 1-mm-long slow-wave Michelson structure.
Utilized carrier depletion mode for modulation.
Implemented T-rail traveling wave electrodes for improved bandwidth.

Main Results:

Achieved a record modulation efficiency of 0.29 V·cm.
Demonstrated a modulation bandwidth of 13.3 GHz.
Attained 20 Gb/s intensity modulation at 1976 nm.

Conclusions:

The demonstrated slow-wave Michelson silicon modulator overcomes limitations in low-power applications.
The device shows significant potential for high-performance optical communication systems at the 2-μm waveband.