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Updated: Jun 24, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Chern Insulator States with Tunable Chern Numbers in a Graphene Moiré Superlattice

Shaoxin Wang1, Zuocheng Zhang1, Hongyuan Li1

  • 1Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States.

Nano Letters
|June 3, 2024
PubMed

Keywords:
Chern insulatoranomalous Hall effectmagnetismmoiré superlatticetrilayer graphene

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