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Coexistence of Interacting Charge Density Waves in a Layered Semiconductor
B Q Lv1,2,3,4, Alfred Zong2,5, Dong Wu6
1Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China.
Physical Review Letters
|June 3, 2024
Summary
Two interacting charge-density-wave (CDW) orders coexist in EuTe4. Time-resolved photoemission reveals distinct CDW behaviors and energy gaps in Te layers, driven by interlayer interactions.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Materials
Background:
- Coexisting orders are crucial in strongly correlated materials, driving phenomena like superconductivity and topological orders.
- EuTe4 exhibits anomalous thermal hysteresis and a semiconducting charge-density-wave (CDW) state without perfect Fermi surface nesting.
Purpose of the Study:
- To investigate the coexistence of two interacting charge-density-wave (CDW) orders in EuTe4.
- To understand the distinct behaviors and energy gaps of CDWs in Te monolayers and bilayers.
Main Methods:
- Time- and angle-resolved photoemission spectroscopy (TARPS) to probe unoccupied conduction bands.
- Analysis of energy gap evolution and renormalization dynamics post photoexcitation.
Main Results:
- Two distinct CDWs were identified in Te monolayers and bilayers, each with a unique energy gap.
- The CDW gaps showed dichotomous responses to photoexcitation; the bilayer gap renormalized less and recovered faster.
- The Te monolayer CDW exhibited momentum-dependent gap renormalization, not predicted by density-functional theory.
Conclusions:
- Interlayer interactions between the two CDW orders are responsible for the semiconducting ground state of EuTe4.
- These findings provide microscopic insights into EuTe4's correlated state and a nonequilibrium approach for studying complex layered systems.
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