Optimizing charge transport in hybrid GaN-PEDOT:PSS/PMMADevice for advanced application.

Area of Science:

• Materials Science
• Optoelectronics
• Semiconductor Physics

Background:

• Organic-inorganic hybrid light-emitting devices combine the strengths of both material types.
• Gallium Nitride (GaN) offers excellent electron mobility, while organic materials provide unique optoelectronic properties.

Purpose of the Study:

• To investigate the optical and electrical characteristics of a novel organic-inorganic heterojunction.
• To analyze a hybrid structure integrating p-type Gallium Nitride (GaN) with specific organic compounds.

Main Methods:

• Fabrication of a heterojunction using spin-coating for organic layers (PMMA or PMMA/PEDOT:PSS) on ITO substrates.
• Pulsed laser deposition of a Gallium Nitride (GaN) layer using varying Nd:YAG laser pulses.
• Thermal evaporation for aluminum electrode deposition and Hall effect measurements for conductivity verification.

Main Results:

• Successful fabrication of organic-inorganic hybrid structures.
• Verification of p-type conductivity in the Gallium Nitride (GaN) layer via Hall effect measurements.
• Demonstration of blue light emission from the GaN-based devices across a voltage range of 45-72 V.

Conclusions:

• The developed organic-inorganic hybrid heterojunctions are capable of producing blue light.
• The study highlights the potential of integrating Gallium Nitride (GaN) with organic materials for efficient light-emitting applications.