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High-mobility InSnZnO Thin Film Transistors via Introducing Water Vapor Sputtering Gas
Ting Li1,2, Xiaohan Liu1,2, Junyan Ren2,3
1Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China.
ACS Applied Materials & Interfaces
|June 6, 2024
Summary
Introducing water during In-Sn-Zn-O (ITZO) film growth paradoxically enhances microstructure and electrical performance in thin-film transistors (TFTs) by reducing defects after annealing.
Area of Science:
- Materials Science
- Thin-Film Electronics
- Semiconductor Physics
Background:
- The role of water in oxide film deposition is debated, impacting film properties and device performance.
- Indium-Tin-Zinc-Oxide (ITZO) is a promising transparent conductive oxide for thin-film transistors (TFTs).
Purpose of the Study:
- To investigate the influence of water vapor (H2O) on the properties of ITZO films and their corresponding TFTs.
- To elucidate the mechanisms by which water affects film microstructure and electrical characteristics.
Main Methods:
- Comparative sputtering deposition of ITZO films with and without water vapor, maintaining constant oxygen flux.
- Post-deposition annealing of the films.
- Electrical characterization of fabricated ITZO thin-film transistors (TFTs).
Main Results:
- As-deposited films with water contained hydrogen-related defects, but annealing led to microstructural ordering.
- Annealing reduced hydrogen-related and vacancy defects (Vo), increased film packing density, and improved M-O network order in water-containing films.
- ITZO TFTs fabricated with 5 sccm water exhibited superior electrical properties, including high mobility (122.10 cm²/V·s), low threshold voltage (-2.30 V), steep sub-threshold swing (0.18 V/dec), high on-current (1420 μA), and good bias stability.
Conclusions:
- Water vapor, despite initially inducing defects, paradoxically enhances the post-annealing microstructure and electrical performance of ITZO films.
- Optimized water incorporation during sputtering is a viable strategy for developing high-performance ITZO TFTs.
