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Ferromagnetism

Ferromagnetism

Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...

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Updated: Jun 24, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Developing fatigue-resistant ferroelectrics using interlayer sliding switching.

Renji Bian^1,2, Ri He³, Er Pan¹

¹School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.

Science (New York, N.Y.)

|June 6, 2024

Summary

This summary is machine-generated.

Researchers developed a fatigue-free ferroelectric memory using bilayer 3R molybdenum disulfide (3R-MoS₂). This breakthrough overcomes material limitations, paving the way for highly durable nonvolatile memory devices.

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Last Updated: Jun 24, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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Published on: April 8, 2018

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Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

Area of Science:

Condensed matter physics
Materials science
Nanotechnology

Background:

Ferroelectric materials offer potential for high-density nonvolatile memory due to their switchable electrical polarization.
A significant challenge limiting ferroelectric device applications is material fatigue, which reduces endurance over time.

Purpose of the Study:

To investigate a novel fatigue-free ferroelectric system for enhanced memory device endurance.
To explore the potential of sliding ferroelectricity in bilayer 3R molybdenum disulfide (3R-MoS₂) for memory applications.

Main Methods:

Fabrication and characterization of a ferroelectric memory device based on bilayer 3R-MoS₂.
Electrical testing of the device's memory performance, including endurance under repeated switching cycles and varying pulse widths.
Theoretical calculations to elucidate the underlying mechanisms of the observed fatigue-free behavior.

Main Results:

The 3R-MoS₂ ferroelectric device demonstrated robust memory performance without a wake-up effect at low cycles.
No substantial fatigue was observed after 10⁶ switching cycles, even under different pulse widths.
The device sustained electrical stress for up to 10⁵ s, indicating high endurance.

Conclusions:

Sliding ferroelectricity in bilayer 3R-MoS₂ presents a promising avenue for creating fatigue-free ferroelectric memory.
The observed fatigue-free behavior is attributed to immobile charge defects within the sliding ferroelectric system.
This finding could significantly advance the development of highly reliable and long-lasting nonvolatile memory technologies.