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Updated: Jun 24, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Optimizing optoelectronic performance: impact of polar-terminated zinc oxide on MoS2Van der Waals heterostructure
1Department of Physics, Indian Institute of Technology Bhilai, Kutelabhata, Bhilai, Chhattisgarh 491002, India.
Abstract:
We report a study on the stability, optical absorption and modulated electronic properties of the ZnO(0001-) and MoS2Van der Waals heterostructure using density functional theory. We employed a supercell of ZnO/MoS2hybrid and specifically explored the effects of creating an interface with the O-terminated face of ZnO while considering the interlayer interaction. We observed an increase in the band gap opening of MoS2within the hybrid structure (1.37 eV) is primarily attributed to in-plane strain, with minimal contribution from the identified charge transfer occurring from MoS2to ZnO. Notably, the hybrid structure exhibits enhanced photo absorption in the visible and near-infrared regions, highlighting their significance for optoelectronic applications.
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