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Updated: Apr 7, 2026

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
Published on: November 16, 2018
Optimizing the energy level alignment for achieving record-breaking efficiency in hot exciton deep red OLEDs
Yujie Wu1,2,3, Jiasen Zhang1,2, Deli Li4
1Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China. liwei1987@nimte.ac.cn.
Researchers developed novel hot exciton emitters for efficient deep red (DR) organic light-emitting diodes (OLEDs). These emitters overcome the "energy gap law" for rapid radiative decay, achieving high quantum yields and external quantum efficiencies in DR-OLEDs.
Area of Science:
- Materials Science
- Organic Electronics
- Photophysics
Background:
- The "energy gap law" hinders efficient light emission in deep red (DR) and near-infrared (NIR) regions due to quenching processes.
- Hot exciton emitters offer a potential solution by enabling rapid radiative decay, but require specific energy level configurations.
- Achieving narrow energy gaps between singlet (S1) and triplet (T2) excited states, with T2 slightly above S1, is crucial for hot exciton functionality.
Purpose of the Study:
- To design and synthesize novel hot exciton emitters for efficient DR and NIR emission.
- To investigate the relationship between molecular design, energy level alignment, and photophysical properties.
- To demonstrate the performance of these emitters in non-doped deep red organic light-emitting diodes (DR-OLEDs).
Main Methods:
- Synthesis of two proof-of-concept hot exciton emitters, αT-IPD and βT-IPD, by coupling specific electron donors (αTPA, βTPA) with an electron acceptor (IPD).
- Characterization of photophysical properties, including energy gaps (ΔES and ΔET), photoluminescence quantum yields (PLQYs), and aggregation-induced emission (AIE) characteristics.
- Fabrication and testing of non-doped DR-OLED devices using the synthesized emitters.
Main Results:
- Both αT-IPD and βT-IPD emitters exhibited narrow ΔES with T2 slightly exceeding S1, and large ΔET.
- The emitters displayed aggregation-induced emission (AIE) and favorable intermolecular interactions in the crystalline state.
- Remarkable PLQYs of 68.5% (αT-IPD) and 73.5% (βT-IPD) were achieved in non-doped films.
- A non-doped DR-OLED based on βT-IPD achieved a maximum external quantum efficiency (EQE) of 15.5% at 667 nm.
Conclusions:
- The designed αT-IPD and βT-IPD molecules effectively function as hot exciton emitters.
- The narrow ΔES and specific molecular packing contribute to high PLQYs and efficient DR emission.
- The achieved 15.5% EQE represents a significant advancement for hot exciton DR-OLEDs, overcoming the energy gap law limitations.
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