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Design of higher Chern number two-band structures from topological defect perspective
Zhi-Wen Chang1, Wei-Chang Hao2, Xin Liu1
1School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, People's Republic of China.
None:
In this article, we propose two methods for designing higher Chern number models from the topological defect perspective. Based on the fact that the Chern number is equal to a summation of the charges of meron defects, we show that the higher Chern number structures can be realized by either moving the positions of merons or increasing the amount of them. The combination of the two methods is also verified to be a viable approach. We shall construct several models and investigate their energy spectrum. More than one gapless state can be observed on the edges of these models. Expectedly, our theory promises to provide not only a simple approach to obtain the Chern number without computing any integrals, but also a practical technique for new material design.
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