Lithography-Free Nanofabrication on Various Semiconductors by the Codeposition Etching Technique

Nano-/microstructures can be formed with the aid of small amounts of impurities during deposition with noble gas plasma irradiation, which is referred to as codeposition etching. This can be a new method for lithography-free semiconductor nanofabrication. Here, the codeposition etching method was employed with argon plasma and molybdenum (Mo) impurities on various semiconductors. Structures can be formed only on substrates that have a lower sputtering yield than the seed impurity. The density, area, and height of structures are related to both the impurity deposition rate and the substrate material. Moreover, two mechanisms of impurity nucleation are proposed according to time dependence results for the formation of the structures.