Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Band Theory02:35

Band Theory

15.1K
When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
15.1K
Semiconductors01:22

Semiconductors

684
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
684
Boundary Conditions for Current Density01:25

Boundary Conditions for Current Density

858
Current density becomes discontinuous across an interface of materials with different electrical conductivities. The normal component of the current density is continuous across the boundary.
858
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

334
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
334
Fermi Level01:18

Fermi Level

567
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
567
Theory of Metallic Conduction01:17

Theory of Metallic Conduction

1.3K
The conduction of free electrons inside a conductor is best described by quantum mechanics. However, a classical model makes predictions close to the results of quantum mechanics. It is called the theory of metallic conduction.
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
1.3K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Prenatal exposure to parental smoking and infertility in sons and daughters: a cohort study.

Human reproduction (Oxford, England)·2026
Same author

Longer survival with precision medicine in late-stage cancer patients.

ESMO open·2025
Same author

Insight into the electronic structure of the centrosymmetric skyrmion magnet GdRu<sub>2</sub>Si<sub>2</sub>.

Nanoscale advances·2023
Same author

Long-lived spin waves in a metallic antiferromagnet.

Nature communications·2023
Same author

Skyrmion Echo in a System of Interacting Skyrmions.

Physical review letters·2022
Same author

Can we predict favourable quality of life after surgically treated vertebral osteomyelitis? Analysis of a prospective study.

Archives of orthopaedic and trauma surgery·2022
Same journal

Erratum: Bacterial Turbulence at Compressible Fluid Interfaces [Phys. Rev. Lett. 136, 138301 (2026)].

Physical review letters·2026
Same journal

Unveiling Light-Quark Yukawa Flavor Structure via Dihadron Fragmentation at Lepton Colliders.

Physical review letters·2026
Same journal

Adaptable Route to Fast Coherent State Transport via Bang-Bang-Bang Protocols.

Physical review letters·2026
Same journal

Topological Transition and Emergence of Elasticity of Dislocation in Skyrmion Lattice: Beyond Kittel's Magnetic-Polar Analogy.

Physical review letters·2026
Same journal

Pound-Drever-Hall Method for Superconducting-Qubit Readout.

Physical review letters·2026
Same journal

Coupling a ^{73}Ge Nuclear Spin to an Electrostatically Defined Quantum Dot in Silicon.

Physical review letters·2026
See all related articles

Related Experiment Video

Updated: Jun 24, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.6K

Emerging Two-Dimensional Conductivity at the Interface between Mott and Band Insulators.

I V Maznichenko1,2, S Ostanin1, D Maryenko3

  • 1Institute of Physics, Martin Luther University Halle-Wittenberg, D-06099 Halle, Germany.

Physical Review Letters
|June 10, 2024
PubMed
Summary
This summary is machine-generated.

We discovered a new conductivity mechanism at interfaces between Mott and band insulators. Oxygen octahedra matching in LaTiO3/KTaO3 systems drives metallization and charge transfer, explaining observed conductivity and superconductivity.

More Related Videos

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.3K
Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
13:56

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

7.6K

Related Experiment Videos

Last Updated: Jun 24, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.6K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.3K
Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
13:56

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

7.6K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Solid-State Chemistry

Background:

  • Interfaces between band insulators and conductors are well-researched.
  • Interfaces involving Mott insulators, like LaTiO3, and band insulators, like KTaO3, remain less understood.
  • Existing models for interfacial conductivity do not fully explain phenomena in Mott insulator systems.

Purpose of the Study:

  • To investigate the interfacial conductivity mechanism at LaTiO3/KTaO3 heterostructures.
  • To explore the role of crystal structure and oxygen octahedra tilting in interfacial electronic properties.
  • To elucidate the origins of conductivity and superconductivity in these specific interfaces.

Main Methods:

  • First-principles calculations were employed to simulate (001), (110), and (111) interfaces.
  • Analysis focused on electronic band structure and charge transfer dynamics.
  • Investigated the influence of oxygen octahedra tilting on material properties.

Main Results:

  • A novel interfacial conductivity mechanism was identified, distinct from those in polar wide-band insulators.
  • Matching of oxygen octahedra tilting between LaTiO3 and KTaO3 is the key factor for conductivity.
  • A small band gap in LaTiO3, sensitive to crystal structure, leads to metallization and charge transfer from Ti to Ta.

Conclusions:

  • The findings provide a new understanding of conductivity at Mott insulator interfaces.
  • Explains conductivity in LaTiO3/KTaO3 (110) interfaces where polar arguments fail.
  • Offers insights into the emergence of superconductivity in related heterostructures.