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Updated: Jun 24, 2025

09:23
Quantum State Engineering of Light with Continuous-wave Optical Parametric Oscillators
Published on: May 30, 2014
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Intra-oscillator high harmonic source reaching 100-eV photon energy.
Optics Express
|June 11, 2024
Summary
This study demonstrates an intra-oscillator approach for high harmonic generation (HHG) X-ray sources, surpassing passive enhancement cavities. This method achieves high XUV flux at 17 MHz, crucial for spectroscopy and advanced applications.
Area of Science:
- Nonlinear Optics
- Laser Physics
- Attosecond Science
Background:
- Optical cavities enhance nonlinear optical conversion, crucial for X-ray generation.
- Passive enhancement cavities have enabled high repetition rate XUV sources for spectroscopy and nuclear clock development.
- Mode-locked lasers offer a single-stage alternative to passive cavities, potentially improving efficiency.
Purpose of the Study:
- To investigate the potential of an intra-oscillator approach for high harmonic generation (HHG) X-ray sources.
- To compare the performance of intra-oscillator HHG with passive enhancement cavities and single-pass systems.
- To demonstrate high XUV flux generation at a relevant repetition rate and wavelength for industrial applications.
Main Methods:
- Utilizing a mode-locked thin-disk laser oscillator for intra-cavity high harmonic generation.
- Operating the system at a 17 MHz repetition rate to generate photon energies between 60 eV and 100 eV.
- Characterizing the generated XUV flux and average power at specific harmonic orders, including 13.5 nm.
Main Results:
- The intra-oscillator approach surpassed passive enhancement cavities in XUV flux.
- Achieved XUV flux comparable to single-pass systems using chirped-pulse fiber amplifiers.
- Generated 60 nW of average power per harmonic order at the 13.5 nm wavelength (60-100 eV photon energy range).
Conclusions:
- The intra-oscillator HHG approach offers a simplified and highly efficient single-stage alternative to passive cavities.
- This method demonstrates superior performance in terms of XUV flux, making it suitable for demanding applications.
- The generated XUV radiation at 13.5 nm is highly relevant for the silicon industry and advanced scientific research.
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