High-efficiency green light emission from InGaN/GaN using localized surface plasmon resonance tuned by combination of...

We achieved significant enhancements in green light emission (550 nm) from InGaN/GaN quantum wells (QWs) by tuning the localized surface plasmon resonance (LSPR) of self-assembled Ag nanoparticles (NPs) through the application of a SiO₂ thin film. The LSPR wavelength of Ag NPs was shifted towards shorter wavelengths by 80 nm using a 5 nm SiO₂ layer to separate Ag NPs from GaN surface, thereby aligning it effectively with the green region. This strategic placement of Ag NPs and a 5 nm SiO₂ film resulted in significant enhancements of photoluminescence (PL) by 15- and 8.8-fold with 5 and 11 nm GaN cap layers, respectively. The LSPR of Ag NPs on a SiO₂ thin film facilitated a longer possible distance for the coupling between surface plasmons (SPs) and excitons in a QW. Traditionally, the distance between SPs-generating metal and a QW has been maintained at 10 nm to achieve substantial enhancements. Remarkably, even with a 25 nm cap layer, Ag NPs on a 5 nm SiO₂ film boosted PL by 3.1-fold. The enhancements attributable to Ag NPs on SiO₂ films were superior, reaching up to 4.8 times greater than those of Ag NPs on GaN surfaces. Additionally, the PL enhancement factors calculated using the finite differential time domain (FDTD) method aligned closely with experimental results.