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Ferromagnetism

Ferromagnetism

Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...

Atomic Nuclei: Nuclear Spin State Overview

Atomic Nuclei: Nuclear Spin State Overview

NMR-active nuclei have energy levels called 'spin states' that are associated with the orientations of their nuclear magnetic moments. In the absence of a magnetic field, the nuclear magnetic moments are randomly oriented, and the spin states are degenerate. When an external magnetic field is applied, the spin states have only 2 + 1 orientations available to them. A proton with = ½ has two available orientations. Similarly, for a quadrupolar nucleus with a nuclear spin value of...

Paramagnetism

Paramagnetism

Paramagnets are materials with unpaired electrons that possess a finite magnetic moment. In the absence of a magnetic field, these moments are randomly oriented, and thus the net moment is zero. Under an external field, a torque acting on the moments tends to align them along the field's direction. However, the random thermal motion of electrons produces a torque opposite to the external field and tries to disorient the moments. These two competing effects align only a few moments along the...

Diamagnetism

Diamagnetism

Materials consisting of paired electrons have zero net magnetic moments. However, when these materials are placed under an external magnetic field, the moments opposite to the field are induced. Such materials are called diamagnets. Diamagnetism is the response of the diamagnets when placed in an external magnetic field.
Diamagnetism was discovered by Anton Brugmans in 1778 when he observed that bismuth gets repelled by magnetic fields, thus theorizing that diamagnets get repelled by magnets....

Colors and Magnetism

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Color in Coordination Complexes
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Atomic Nuclei: Nuclear Relaxation Processes

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In the absence of an external magnetic field, nuclear spin states are degenerate and randomly oriented. When a magnetic field is applied, the spins begin to precess and orient themselves along (lower energy) or against (higher energy) the direction of the field. At equilibrium, a slight excess population of spins exists in the lower energy state. Because the direction of the magnetic field is fixed as the z-axis, the precessing magnetic moments are randomly oriented around the z-axis.

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Related Experiment Video

Updated: Jun 24, 2025

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers

Published on: October 5, 2013

An antiferromagnetic spin phase change memory.

Han Yan¹, Hongye Mao¹, Peixin Qin²

¹School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.

Nature Communications

|June 11, 2024

Summary

Researchers developed a novel antiferromagnetic memory device using a spin phase change in Mn-Ir thin films. This new memory offers significantly larger resistance modulation at room temperature compared to traditional methods.

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Last Updated: Jun 24, 2025

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers

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Phase Diagram Characterization Using Magnetic Beads as Liquid Carriers

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Area of Science:

Materials Science
Condensed Matter Physics
Spintronics

Background:

Antiferromagnetic memory devices typically exhibit small electrical outputs at room temperature due to the anisotropic magnetoresistance effect.
Existing technologies require significant improvements in signal magnitude and stability.

Purpose of the Study:

To develop a new type of antiferromagnetic memory device with enhanced room-temperature resistance modulation.
To explore the potential of spin phase change in binary intermetallic thin films for memory applications.

Main Methods:

Investigated a Mn-Ir binary intermetallic thin film at its collinear and noncollinear phase boundary.
Utilized piezoelectric strain to reversibly interconvert the spin structure.
Measured resistance modulation and device stability under various conditions.

Main Results:

Achieved a large nonvolatile room-temperature resistance modulation, two orders of magnitude greater than the anisotropic magnetoresistance effect.
Demonstrated reversible spin structure interconversion via piezoelectric strain.
Observed remarkable time and temperature stabilities, and robustness in high magnetic fields (up to 60 T).

Conclusions:

The developed antiferromagnetic spin phase change memory offers a promising alternative to existing technologies.
This device mimics phase change memory using a quantum spin degree of freedom, paving the way for next-generation memory devices.
The material's stability and large signal output make it suitable for practical applications.