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Time-Domain Interpretation of PD Control01:07

Time-Domain Interpretation of PD Control

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Proportional-Derivative (PD) control is a widely used control method in various engineering systems to enhance stability and performance. In a system with only proportional control, common issues include high maximum overshoot and oscillation, observed in both the error signal and its rate of change. This behavior can be divided into three distinct phases: initial overshoot, subsequent undershoot, and gradual stabilization.
Consider the example of control of motor torque. Initially, a positive...
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Node Analysis for AC Circuits01:14

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Consider an angioplasty system featuring a catheter equipped with a turbine, a critical tool for removing plaque deposits from coronary arteries. This intricate medical device operates using a circuit model reminiscent of a dual-node RLC circuit powered by a current-controlled voltage source.
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Series R—L Circuit Transients01:22

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In a series resistor-inductor (R-L) circuit, closing the switch at the start of the time period simulates a three-phase short circuit, a fault condition where all three phases of an unloaded synchronous machine are short-circuited. When there is no fault impedance and no initial current, the initial voltage is determined by the phase angle of the source voltage.
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Biasing of FET01:22

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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
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Small-Signal Analysis of MOSFET Amplifiers01:23

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In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
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The current growth and decay in RL circuits can be understood by considering a series RL circuit consisting of a resistor, an inductor, a constant source of emf, and two switches. When the first switch is closed, the circuit is equivalent to a single-loop circuit consisting of a resistor and an inductor connected to a source of emf. In this case, the source of emf produces a current in the circuit. If there were no self-inductance in the circuit, the current would rise immediately to a steady...
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Related Experiment Video

Updated: Jun 24, 2025

Real-Time Proxy-Control of Re-Parameterized Peripheral Signals using a Close-Loop Interface
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Analysis and Control of RRAM Overshoot Current.

Pragya R Shrestha1, David M Nminibapiel2, Jason P Campbell3

  • 1Theiss Research, La Jolla, CA USA and the Engineering Physics Division of the NIST, Gaithersburg, MD 20899 USA.

IEEE Transactions on Electron Devices
|June 13, 2024
PubMed
Summary
This summary is machine-generated.

Current overshoot in RRAM forming is unavoidable, but its peak value is not linked to parasitic capacitance. The overshoot duration, however, is critical for controlling RRAM forming, especially with ultra-short pulses.

Keywords:
Current overshootResistive random access memory (RRAM)formingswitching variability

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Device Physics

Background:

  • Resistive Random-Access Memory (RRAM) exhibits significant variability, often addressed by current compliance elements during forming.
  • Current overshoot during RRAM forming, regardless of compliance (1R-1R, 1T-1R), is a known phenomenon.
  • The peak overshoot current has been conventionally linked to filament characteristics and parasitic capacitance.

Purpose of the Study:

  • To investigate the relationship between parasitic capacitance and current overshoot during RRAM forming.
  • To clarify the role of overshoot current characteristics in the success of ultra-short pulse forming.
  • To challenge the conventional understanding of peak overshoot current as a predictive metric.

Main Methods:

  • Detailed circuit analysis of 1R-1R and 1T-1R structures.
  • Experimental measurements on RRAM test structures.
  • Comparison of ultra-short pulse forming with conventional methods.

Main Results:

  • The peak overshoot current is independent of parasitic capacitance.
  • The duration of the current overshoot is strongly dependent on parasitic capacitance.
  • Ultra-short pulse forming achieves control because overshoot duration is less than pulse duration.

Conclusions:

  • Parasitic capacitance does not influence the peak overshoot current in RRAM forming.
  • Overshoot duration is the key parameter for controlling RRAM forming, particularly with ultra-short pulses.
  • The success of compliance-free ultra-short pulse forming is explained by controlling overshoot duration.