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Related Experiment Video

Updated: May 11, 2026

Scanning-probe Single-electron Capacitance Spectroscopy
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DC-free Method to Evaluate Nanoscale Equivalent Oxide Thickness: Dark-Mode Scanning Capacitance Microscopy.

Mao-Nan Chang1, Yi-Shan Wu2, Chiao-Jung Lin2

  • 1Department of Physics, National Chung Hsing University, Taichung 402, Taiwan.

Nanomaterials (Basel, Switzerland)
|June 13, 2024
PubMed
Summary

A new DC-free technique using dark-mode scanning capacitance microscopy (DM-SCM) accurately measures equivalent oxide thicknesses (EOTs) for thermal and high-k oxides. This method offers precise EOT evaluation and imaging, overcoming limitations of conventional capacitance-voltage (C-V) methods.

Keywords:
DC stressequivalent oxide thicknesshigh-kmappingscanning capacitance microscopy

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Conventional capacitance-voltage (C-V) methods for equivalent oxide thickness (EOT) evaluation require large electrodes and DC voltage sweeps, potentially affecting measurements.
  • Accurate EOT determination is crucial for advanced semiconductor device characterization and reliability assessment.

Purpose of the Study:

  • To develop and validate a novel DC-free technique for evaluating and imaging equivalent oxide thicknesses (EOTs) using dark-mode scanning capacitance microscopy (DM-SCM).
  • To demonstrate the capability of DM-SCM for precise EOT measurements on both thermal and high-k oxide films.
  • To enable visualization of EOT variations, including those induced by DC stress.

Main Methods:

  • Development of a DC-free scanning capacitance microscopy (SCM) technique utilizing a small-area contact electrode (DM-SCM).
  • Establishment of a linear relationship between SCM signal ratio and EOT ratio using thermal oxide films as calibration references.
  • Experimental validation of DM-SCM against the conventional C-V method for EOT determination across a frequency range of 90 kHz to 1 MHz.

Main Results:

  • DM-SCM achieved accurate EOT evaluation for thermal and high-k oxides down to a few nanometers.
  • Experimental results showed excellent agreement between DM-SCM and C-V methods for thermal oxides, with EOT differences below 0.5%.
  • DM-SCM successfully generated EOT images, visualizing variations and the impact of DC-stress-induced charge trapping.

Conclusions:

  • The proposed DC-free DM-SCM technique provides a reliable and accurate alternative for EOT evaluation, particularly for thin oxide layers.
  • DM-SCM offers advantages over conventional C-V methods by eliminating DC voltage effects and enabling spatial EOT mapping.
  • This technique enhances the characterization of semiconductor oxides, offering insights into material uniformity and stress-induced degradation.