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Plasmonic Bound States in the Continuum Metasurface-Semiconductor-Metal Architecture Enables Efficient
Zichen Wang1,2, Jiacheng Sun2,3, Chenbo Wu2
1Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China.
ACS Applied Materials & Interfaces
|June 14, 2024
Summary
We developed a new plasmonic metasurface-semiconductor-metal photodetector using bound states in the continuum (BIC). This device overcomes low hot electron emission, achieving high responsivity for sub-bandgap light detection.
Area of Science:
- Optoelectronics
- Nanotechnology
- Materials Science
Background:
- Plasmonic hot-electron-based photodetectors (HEB-PDs) offer sub-bandgap illumination detection.
- Low hot electron emission probability limits responsivity in current HEB-PDs.
Purpose of the Study:
- To propose and demonstrate a compact plasmonic bound state in continuum metasurface-semiconductor-metal-based (BIC M-S-M) HEB-PD.
- To enhance light-matter interactions and improve photoresponse using BIC-manipulated gap surface plasmons.
Main Methods:
- Utilized a binary-pore anodic alumina oxide template technique.
- Fabricated a stacked M-S-M structure incorporating a symmetry-protected BIC.
- Characterized device performance under normal incidence with external bias.
Main Results:
- Achieved near-unit absorption (∼90%) around 800 nm.
- Demonstrated a responsivity of 5.18 A/W and an internal quantum efficiency (IPCE) of 824.23% at 780 nm.
- The ultrathin (∼150 nm) BIC M-S-M device exhibited excellent angular and mechanical stability.
Conclusions:
- The proposed plasmonic BIC strategy significantly enhances HEB-PD performance.
- This approach offers a promising pathway for advanced hot-electron applications.
- Potential applications include photocatalysis, biosensing, and imaging.
