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Related Concept Videos

Biasing of FET01:22

Biasing of FET

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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
259

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Dual-polarization pump rejection filter in silicon nitride technology.

David E Medina, Sébastien Tanzilli, Laurent Vivien

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    We developed a new method for on-chip pump rejection filters using silicon nitride Bragg gratings. This approach achieves over 60 dB rejection for both polarizations, advancing nonlinear optical applications.

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    Area of Science:

    • Photonics and Optical Engineering
    • Integrated Optics
    • Nonlinear Optics

    Background:

    • On-chip pump rejection filters are crucial for nonlinear optical applications like Raman spectroscopy.
    • Silicon-based filters achieve high rejection via non-coherent cascading of modal-engineered Bragg filters.
    • Silicon nitride's lower index contrast limits polarization suppression in conventional filters.

    Purpose of the Study:

    • To overcome the polarization suppression limitations in silicon nitride waveguides.
    • To propose and demonstrate a novel strategy for high-rejection on-chip filters.
    • To enable advanced nonlinear optical functionalities in silicon nitride photonics.

    Main Methods:

    • Development of a novel cascading strategy combining modal- and polarization-engineered Bragg filters.
    • Experimental demonstration of the proposed filter design in silicon nitride.
    • Characterization of filter rejection levels and bandwidth for both polarizations.

    Main Results:

    • Experimental demonstration of a novel filter strategy in silicon nitride waveguides.
    • Achieved optical rejection exceeding 60 dB for both transverse electric and transverse magnetic polarizations.
    • Obtained a filter bandwidth of 4.4 nm for the demonstrated device.

    Conclusions:

    • The proposed modal- and polarization-engineered Bragg filter cascading strategy effectively overcomes limitations in silicon nitride.
    • This work reports the highest rejection achieved for silicon nitride Bragg gratings supporting both polarizations.
    • The demonstrated filters are key enablers for integrated nonlinear photonics utilizing silicon nitride.