Small Feature-Size Transistors Based on Low-Dimensional Materials: From Structure Design to Nanofabrication...

Area of Science:

• Materials Science
• Electrical Engineering
• Nanotechnology

Background:

• Moore's Law drives continuous transistor miniaturization, but faces challenges like short channel effects (SCEs).
• Low-dimensional materials offer superior electrical properties, presenting alternatives to silicon for advanced transistors.
• Existing research often focuses on material properties; this review emphasizes device structure and fabrication.

Purpose of the Study:

• To review state-of-the-art low-dimensional material-based transistors with small feature sizes.
• To analyze the role of device structure design (vertical, nano-gate) and nanofabrication in achieving miniaturization.
• To provide a comprehensive summary of operation mechanisms, fabrication, performance, and applications.

Main Methods:

• Review of recent literature on low-dimensional material transistors.
• Analysis of device structures, including vertical and nano-gate designs.
• Examination of nanofabrication techniques for small feature sizes.

Main Results:

• Low-dimensional materials enable overcoming SCEs in small transistors.
• Device engineering (vertical/nano-gate structures) and nanofabrication are key to miniaturization.
• Comprehensive data on mechanisms, fabrication, performance, and applications are presented.

Conclusions:

• Low-dimensional materials are crucial for next-generation small footprint transistors.
• Advanced device design and fabrication techniques are essential for continued scaling.
• Future research should focus on optimizing these materials and structures for cutting-edge applications.