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Updated: Jun 23, 2025

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Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
Published on: March 27, 2018
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Enhanced Spectroscopic Insight into Acceptor-Modified Barium Strontium Titanate Thin Films Deposited via the Sol-Gel
Dionizy Czekaj1, Agata Lisińska-Czekaj1
1Faculty of Mechanical Engineering and Ship Technology, Gdańsk University of Technology, 11/12, Narutowicza St., 80-233 Gdańsk, Poland.
Materials (Basel, Switzerland)
|June 19, 2024
Summary
This study explores barium strontium titanate (BaxSr1-xTiO3) thin films modified with magnesium oxide (MgO). The 3 mol% MgO addition optimized dielectric properties, enhancing capacitance for potential electronic applications.
Area of Science:
- Materials Science
- Solid-State Physics
- Ceramic Engineering
Background:
- Barium strontium titanate (BaxSr1-xTiO3) is a key ferroelectric material with tunable dielectric properties.
- Composite materials offer enhanced performance by combining different material characteristics.
- Magnesium oxide (MgO) acts as a linear dielectric reinforcement in ferroelectric matrices.
Purpose of the Study:
- To investigate the effect of MgO addition on the structural and impedance properties of BaxSr1-xTiO3 thin films.
- To optimize the composition of BaxSr1-xTiO3-MgO composites for improved dielectric performance.
- To analyze the relaxation mechanisms in these composite thin films.
Main Methods:
- Sol-gel deposition of BaxSr1-xTiO3-MgO composite thin films on stainless steel substrates.
- Thermal treatment at 650 °C to achieve desired film properties.
- Impedance spectroscopy analysis using Kohlrausch-Williams-Watts function and electric equivalent circuit modeling.
Main Results:
- The incorporation of MgO (1-5 mol%) into BaxSr1-xTiO3 films influenced impedance response and relaxation behavior.
- Films with 3 mol% MgO showed the least stretched relaxation function (β values).
- Capacitance significantly increased from 2.97 × 10-12 F to 5.78 × 10-10 F with 3 mol% MgO addition.
Conclusions:
- MgO acts as an effective reinforcement in BaxSr1-xTiO3 thin films, modifying their dielectric properties.
- The optimal MgO concentration for enhanced capacitance was found to be 3 mol%.
- The observed non-Debye-type relaxation phenomena suggest complex charge carrier dynamics within the composite films.

