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Direct bandgap quantum wells in hexagonal Silicon Germanium

Wouter H J Peeters1, Victor T van Lange1, Abderrezak Belabbes2,3

  • 1Department of Applied Physics, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands.

Nature Communications
|June 19, 2024
PubMed
Summary

Researchers created direct bandgap quantum wells using hexagonal silicon-germanium alloys. These novel light-emitting devices operate up to room temperature, overcoming silicon

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