Nanotransistor-based gas sensing with record-high sensitivity enabled by electron trapping effect in nanoparticles

Qitao Hu1,2, Paul Solomon3, Lars Österlund4

  • 1Division of Solid-State Electronics, Department of Electrical Engineering, Uppsala University, BOX 65, SE-75121, Uppsala, Sweden.

Nature Communications
|June 19, 2024
PubMed
Summary

This study introduces a new nanoscale field-effect transistor (FET) gas sensor for highly sensitive hydrogen (H2) detection. It utilizes an electron trapping mechanism for ultra-low power consumption and ppb-level detection limits.