Room-temperature spin injection across a chiral perovskite/III-V interface

Area of Science:

• Materials Science
• Condensed Matter Physics
• Optoelectronics

Background:

• Spin accumulation in semiconductors is crucial for advanced optoelectronic devices.
• Current spin injection methods face inefficiencies at semiconductor interfaces.

Purpose of the Study:

• To demonstrate efficient spin injection across chiral halide perovskite/III-V interfaces.
• To achieve spin accumulation in a III-V semiconductor light-emitting diode (LED).

Main Methods:

• Fabrication of a chiral perovskite/III-V heterostructure.
• Integration into an (AlxGa1-x)0.5In0.5P multiple quantum well LED.
• Characterization using X-ray photoelectron spectroscopy (XPS), Kelvin probe force microscopy (KPFM), and transmission electron microscopy (TEM).
• Detection of spin accumulation via circularly polarized light emission.

Main Results:

• Successful spin injection across the chiral perovskite/III-V interface.
• Achieved spin accumulation in the III-V semiconductor, detected by circularly polarized light emission (up to 15 ± 4% polarization).
• Characterization confirmed a clean, equilibrated semiconductor/semiconductor interface.

Conclusions:

• Chiral perovskite semiconductors can effectively facilitate spin injection into traditional semiconductor platforms.
• This approach enables spin control in well-established semiconductor technologies.
• Opens new avenues for spintronic and optoelectronic device functionalities.