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Sliding Ferroelectricity Engineered Coupling between Spin Hall Effect and Layertronics in 2D Lattice.
Yangyang Feng1, Ying Dai1, Baibiao Huang1
1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Street 27, Jinan 250100, China.
The Journal of Physical Chemistry Letters
|June 20, 2024
Summary
Researchers engineered a novel layer spin Hall effect (LSHE) by coupling sliding ferroelectricity with 2D materials. This effect allows for ferroelectric control of spin currents in layered electronic devices.
Area of Science:
- Condensed-matter physics
- Materials science
- Spintronics
Background:
- The spin Hall effect is crucial for understanding electron behavior in condensed matter.
- Novel degrees of freedom, like those in 2D materials, offer new avenues for spintronic applications.
Purpose of the Study:
- To engineer a coupling between the spin Hall effect and ferroelectricity in 2D materials.
- To investigate the resulting layer spin Hall effect (LSHE) and its control.
Main Methods:
- Symmetry analysis and low-energy effective models were employed.
- First-principles calculations were used to validate the mechanism in real bilayer systems.
Main Results:
- A layer-polarized spin Hall effect (LP-SHE) was generated in 2D bilayers through ferroelectric coupling.
- The LP-SHE was demonstrated to be controllable by sliding ferroelectricity, exhibiting ferroelectric reversibility.
Conclusions:
- The study introduces sliding ferroelectricity as a mechanism to engineer the spin Hall effect in 2D materials.
- This work opens new possibilities for controlling spin currents in next-generation electronic devices.
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