Related Experiment Video
Updated: Jun 23, 2025

05:52
Observation and Analysis of Blinking Surface-enhanced Raman Scattering
Published on: January 11, 2018
7.4K
Phase Transformation on Multilayer 2M-WS2 for Improved Surface-enhanced Raman Scattering
Yanchao Guan1,2, Mengxin Chen3, Ye Ding1,2,4
1School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China.
ACS Nano
|June 21, 2024
Summary
Phase transformation in two-dimensional (2D) transition metal dichalcogenides (TMDCs) enhances surface-enhanced Raman scattering (SERS). Annealing 2D tungsten disulfide (WS2) creates a phase transition, significantly boosting SERS detection limits and Raman intensity.
Area of Science:
- Materials Science
- Nanotechnology
- Spectroscopy
Background:
- Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are excellent platforms for surface-enhanced Raman scattering (SERS).
- Phase transformation in 2D TMDCs offers a strategy to tune SERS performance.
Purpose of the Study:
- To investigate the SERS performance of multilayer 2M-WS2.
- To explore the impact of phase transformation on the SERS capabilities of 2D WS2.
Main Methods:
- Multilayer 2M-WS2 nanosheets were subjected to thermal annealing and laser treatment.
- Phase transition from 2M-WS2 to 2H-WS2 was induced.
- SERS performance was evaluated using CV molecules, comparing phase-transformed 2H-WS2 with commercially pure 2H-WS2 (P-2H-WS2).
Main Results:
- Thermally induced phase transition from 2M-WS2 to 2H-WS2 was achieved.
- Phase-transformed 2H-WS2 exhibited SERS properties comparable to 2M-WS2, outperforming P-2H-WS2.
- Detection limits for CV molecules were 3 orders of magnitude lower, and Raman intensity enhancements were 10-37 times higher compared to P-2H-WS2.
- Accelerated charge transfer in phase-transformed 2H-WS2 was attributed to bandgap reduction and vacancy-induced reorganization.
Conclusions:
- Metal-to-semiconductor phase transition in 2D TMDCs is a viable strategy for enhancing SERS.
- Phase-transformed 2H-WS2 demonstrates superior SERS activity due to modified electronic properties and defect engineering.

