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Multifunctional In-Memory Logics Based on a Dual-Gate Antiambipolar Transistor toward Non-von Neumann Computing

Yoshitaka Shingaya¹, Takuya Iwasaki¹, Ryoma Hayakawa¹

¹Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.

ACS Applied Materials & Interfaces

|June 24, 2024

Summary

This summary is machine-generated.

Researchers developed novel in-memory computing using a dual-gate antiambipolar transistor. This enables reconfigurable logic circuits and artificial synapses, paving the way for non-von Neumann computing architectures.

Keywords:

2D materials antiambipolar transistor in-memory logic nanofloating gate neuromorphic device non-von Neumann computing

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Area of Science:

Materials Science
Computer Engineering
Nanotechnology

Background:

In-memory computing aims to overcome von Neumann architecture limitations by integrating logic and memory.
Reconfigurable devices are crucial for advanced computing paradigms.

Purpose of the Study:

To investigate in-memory logic operations and multifunctional artificial synapses using a novel transistor structure.
To demonstrate electrical reconfigurability in these devices.

Main Methods:

Fabrication of a dual-gate antiambipolar transistor (AAT) with a ReS₂/WSe₂ heterojunction and a ZnPc-PS₄ memory layer.
Exploitation of the AAT's Λ-shaped transfer curve and the memory effect for device operation.
Demonstration of two-input logic circuits and artificial synaptic functions.

Main Results:

Electrically reconfigurable two-input logic circuits (AND, OR, NAND, NOR, XOR) were achieved.
Nonvolatile memory enabled switching between different logic functions.
Multifunctional artificial synapses demonstrated reconfigurable inhibitory/excitatory and potentiation/depression operations.

Conclusions:

The developed AAT device offers a platform for reconfigurable in-memory computing.
This approach provides a pathway towards novel computing architectures beyond the von Neumann model.