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Precise Characterization of a Waveguide Fiber Interface in Silicon Carbide
Marcel Krumrein1, Raphael Nold1, Flavie Davidson-Marquis2,3
13rd Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany.
ACS Photonics
|June 24, 2024
Summary
We developed efficient silicon carbide waveguide interfaces for quantum technologies, achieving over 90% photon collection efficiency and significantly boosting photon count rates for scalable quantum networks.
Area of Science:
- Quantum Information Science
- Materials Science
- Nanophotonics
Background:
- Spin-active optical emitters in silicon carbide (SiC) are promising for scalable quantum technologies.
- Challenges include inefficient photon collection due to undirected emission and low total internal reflection angles in SiC.
Purpose of the Study:
- To comprehensively study nanophotonic waveguide-to-fiber interfaces in SiC.
- To enhance photon collection efficiency and explore applications in quantum networks.
Main Methods:
- Fabrication and characterization of SiC nanophotonic waveguides.
- Integration of silicon vacancy (SiV) color centers into SiC waveguides.
- Measurement of photon collection efficiency, count rates, spin state shifts, and spin coherence times.
Main Results:
- Experimental collection efficiencies consistently exceeded 90% across various fabrication parameters.
- Integrated SiV color centers achieved a photon count rate of 181 kcps, an order of magnitude higher than standard setups.
- Coherent electron spin manipulation demonstrated state-of-the-art coherence times (T2 ~ 42 μs).
Conclusions:
- Nanophotonic waveguide interfaces significantly improve photon collection in SiC for quantum applications.
- The demonstrated methods are robust and scalable for building quantum networks with multiple emitters.
