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Published on: December 5, 2015
Enhance Carrier Diffusion of Monolayer MoSe2 by Interface Engineering
Kun Zhao1, Dawei He1, Xiaojing Liu1
1Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
Interface engineering significantly enhances the performance of two-dimensional materials like monolayer molybdenum diselenide (ML MoSe2) field-effect transistors (FETs). Modifying the interface with self-assembled monolayers improves carrier mobility for advanced electronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional (2D) materials offer promising potential for next-generation electronics beyond complementary metal-oxide-semiconductor (CMOS) technology.
- Field-effect transistors (FETs) based on 2D materials are of significant interest, but their performance is often limited by interface quality and extrinsic scattering.
- Improving device performance necessitates addressing challenges related to charged impurities, charge traps, and substrate surface roughness at the material interface.
Purpose of the Study:
- To investigate the impact of interface quality on carrier diffusion behavior in monolayer molybdenum diselenide (ML MoSe2).
- To explore interface engineering strategies for enhancing the performance of ML MoSe2-based field-effect transistors (FETs).
- To provide a feasible method for improving carrier diffusion and enabling the use of 2D materials in integrated circuits.
Main Methods:
- Utilized an in situ ultrafast laser technique to study carrier diffusion behaviors in ML MoSe2, minimizing surface contamination during fabrication.
- Employed interface engineering by introducing two types of self-assembled monolayers (SAMs) to modify the gate dielectric surface.
- Achieved chemically stable interfaces through SAM modification for enhanced device performance.
Main Results:
- Interface engineering with SAMs significantly enhanced the transport properties of ML MoSe2.
- Carrier mobility in ML MoSe2 improved from approximately 59.4 cm² V⁻¹ s⁻¹ to 166.5 cm² V⁻¹ s⁻¹ after SAM modification.
- Photocarrier dynamics of ML MoSe2 were carefully studied before and after interfacial engineering.
Conclusions:
- Interface engineering is a crucial factor in optimizing the performance of 2D material-based electronic devices.
- The developed SAM modification approach offers a viable method for improving carrier diffusion and transport properties in ML MoSe2.
- This study paves the way for the practical application of 2D materials in future integrated circuits.
