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Updated: Jun 27, 2026

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers
Published on: October 5, 2013
Ferroelectric freestanding hafnia membranes with metastable rhombohedral structure down to 1-nm-thick
Yufan Shen1, Kousuke Ooe2, Xueyou Yuan3
1Institute for Chemical Research, Kyoto University, Uji, Kyoto, Japan.
Abstract:
Two-dimensional freestanding membranes of materials, which can be transferred onto and make interfaces with any material, have attracted attention in the search for functional properties that can be utilized for next-generation nanoscale devices. We fabricated stable 1-nm-thick hafnia membranes exhibiting the metastable rhombohedral structure and out-of-plane ferroelectric polarizations as large as 13 μC/cm2. We also found that the rhombohedral phase transforms into another metastable orthorhombic phase without the ferroelectricity deteriorating as the thickness increases. Our results reveal the key role of the rhombohedral phase in the scale-free ferroelectricity in hafnia and also provide critical insights into the formation mechanism and phase stability of the metastable hafnia. Moreover, ultrathin hafnia membranes enable heterointerfaces and devices to be fabricated from structurally dissimilar materials beyond structural constrictions in conventional film-growth techniques.
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