Elastic modulus of β-Ga₂O₃ nanowires measured by resonance and three-point bending techniques

Due to the recent interest in ultrawide bandgap β-Ga₂O₃ thin films and nanostructures for various electronics and UV device applications, it is important to understand the mechanical properties of Ga₂O₃ nanowires (NWs). In this work, we investigated the elastic modulus of individual β-Ga₂O₃ NWs using two distinct techniques - in-situ scanning electron microscopy resonance and three-point bending in atomic force microscopy. The structural and morphological properties of the synthesised NWs were investigated using X-ray diffraction, transmission and scanning electron microscopies. The resonance tests yielded the mean elastic modulus of 34.5 GPa, while 75.8 GPa mean value was obtained via three-point bending. The measured elastic moduli values indicate the need for finely controllable β-Ga₂O₃ NW synthesis methods and detailed post-examination of their mechanical properties before considering their application in future nanoscale devices.