Related Experiment Video
Updated: Apr 12, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
On Defect Evolution in EBM Additively Manufactured Ti-6Al-4V via In Situ Investigations
Wei Sun1, Ming Li2, Hezong Li3
1School of Intelligent Manufacturing and Electronic Engineering, Wenzhou University of Technology, Wenzhou 325035, China.
Abstract:
This study concerned the in situ investigation of the defect evolution and fracture mechanism of additively manufactured (AM) Ti-6Al-4V under uniaxial tensile tests. In order to achieve this, microstructure characterization was initially carried out in order to identify the defects within the matrix of the candidate material. In situ testing was then performed, focusing on the spherical defect to observe its evolution under tensile loading. It was found that, before the fracture stage, the geometric evolution of the spherical defect towards an ellipse shape was dominated by the load in the tensile direction. In addition, the slip band density was found to be aggravated near the spherical defect due to the geometric discontinuity-induced stress concentration. During the fracture process, the defect geometry evolved as an irregular shape, which was mainly attributed to the micro-void-induced localized multi-axial stress state. The fracture analysis indicated that defects play a key role in crack initiation, leading to the fracture of LPBF materials.
More Related Videos
07:15A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
Published on: June 2, 2017
12:18Co-localizing Kelvin Probe Force Microscopy with Other Microscopies and Spectroscopies: Selected Applications in Corrosion Characterization of Alloys
Published on: June 27, 2022
Related Concept Videos
Imperfections in Crystal Structure: Stoichiometric Point Defects
Imperfections in Crystal Structure: Non-Stoichiometric Defects