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A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance
Rongyao Ma1,2, Ruoyu Wang1, Hao Fang2
1School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.
Abstract:
In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations. A deep trench filled with P-poly-Si combined with the P-SiC region leads to a charge balance effect. Instead of a full-SiC P region in conventional super-junction MOSFET, this new structure reduces the P region in a super-junction MOSFET, thus helping to lower the specific on-resistance. As a result, the figure of merit (FoM, BV2/R) of the proposed new structure is 642% and 39.65% higher than the C-MOS and the SJ-MOS, respectively.
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