Related Experiment Video
Updated: Jun 22, 2025

Scanning-probe Single-electron Capacitance Spectroscopy
Published on: July 30, 2013
50 GHz Four-Port Coupling-Reduced Probe Card Utilizing Pogo Pins Housed in Custom Metallic Socket
1School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea.
Abstract:
A design for a pogo-pin probe card featuring a metallic socket is proposed to eliminate signal leakage and coupling loss in a multi-port environment. The proposed metallic pogo-pin socket includes a metal wall structure between adjacent pogo pins, ensuring complete isolation. This metal wall offers an advantage in removing coupling issues between pogo pins that can occur with typical dielectric pogo-pin sockets. The designed probe card is fabricated as a prototype and verified for its performance. Measurement results using a test through line show that coupled power is minimized, providing a low-loss transmission performance of -2.14 dB to an RF chip at 50 GHz, all within a compact size. Although the dielectric spacer used to secure the pogo pins allows for some leakage, it can maintain a low coupling performance of under -15 dB in the millimeter-wave band. The prototype probe card can deliver an RF signal to a 5G circuit with a low loss of -0.7 dB at 28 GHz and -1.9 dB at 39 GHz frequency. The designed probe card is capable of transmitting multiple RF signals to the RF system without signal distortion in a multi-port environment.
More Related Videos
08:57Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice
Published on: August 10, 2019
12:18Co-localizing Kelvin Probe Force Microscopy with Other Microscopies and Spectroscopies: Selected Applications in Corrosion Characterization of Alloys
Published on: June 27, 2022
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Impedance Combination