Combining Trivalent Ion-Doping with Halide Alloying to Increase the Efficiency of Tin Perovskites

Tin-halide perovskites (THP) are emerging materials for photovoltaics with optoelectronic properties potentially rivaling lead-based analoges. Their efficiencies in solar cells are, however, severely limited by the high sensitivity of tin to oxygen and the heavy p-doping natively present in the material. While the effects of oxygen can be mitigated by using reducing agents upon the synthesis and by encapsulating the device, the native p-doping caused by the high density of acceptor defects remains a challenge to be further addressed for prolonging carrier lifetimes and, consequently, device efficiency. In this work, potential compositional engineering strategies aimed at reducing the p-doping of this class of materials and increasing their efficiency in solar cells are investigated. Based on density functional theory simulations it is demonstrated that THP doping with d¹s² trivalent ions effectively decreases the hole background density and the density of the deep defects responsible for the non-radiative recombination in these materials. This effect is enhanced by alloying iodide with small fractions of bromide, up to 33%. Higher bromide fractions, instead, are detrimental due to the increased non-radiative recombination. These results may provide useful guidelines to experimentalists for improving the optoelectronic quality of THPs and consequently of the ensuing devices.