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Updated: Jun 22, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Electronic and Transport Properties of InSe/PtTe2 van der Waals Heterostructure

Siyu Zhang1,2, Zhengchang Xia1,2, Junhua Meng3

  • 1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China.

Nano Letters
|June 27, 2024
PubMed

Keywords:
carrier mobilityelectronic band structureexternal electric fieldinterlayer excitonvdW heterostructure

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