Related Experiment Video
Updated: Jun 22, 2025

Aerosol-assisted Chemical Vapor Deposition of Metal Oxide Structures: Zinc Oxide Rods
Published on: September 14, 2017
Cation Occupation Engineering Realizes Valence Modulation of Manganese-Activated ZnGa2O4
Yiping Wu1, Meng Wu1, Shiwei Yang1
1Research Institute of Photonics, Dalian Polytechnic University, Dalian 116034, China.
This study developed Mn-activated ZnGa2O4 (ZGO) phosphors with tunable luminescence. Magnesium codoping enhances photoluminescence intensity and enables applications in anticounterfeiting and plant lighting.
Area of Science:
- Materials Science
- Solid State Chemistry
- Luminescence
Background:
- Manganese-activated zinc gallate (ZGO) phosphors offer tunable optical properties.
- Controlling manganese valence states is key to modulating luminescence characteristics.
Purpose of the Study:
- To develop multifunctional Mn-activated ZGO phosphors.
- To investigate the effect of magnesium (Mg2+) codoping on luminescence properties and valence states of manganese (Mn).
Main Methods:
- Synthesis of Mn-activated ZGO phosphors.
- Characterization of photoluminescence (PL) and thermoluminescence (TL).
- Investigation of valence states of Mn ions using spectroscopic techniques.
Main Results:
- Achieved characteristic green and red emission from Mn-activated ZGO phosphors.
- Demonstrated valence modulation of Mn (Mn2+ and Mn4+) influencing luminescence intensity and duration.
- Mg2+ codoping enhanced PL intensity by 3.8 times and broadened Mn4+ emission bands.
- Proposed hypotheses for Mg2+ occupancy and its effect on Mn valence states.
Conclusions:
- Mn-activated ZGO phosphors exhibit tunable luminescence and persistent properties.
- Mg2+ codoping effectively regulates Mn valence states, enhancing luminescence.
- Synthesized phosphors show potential for anticounterfeiting, information storage, and plant lighting.
More Related Videos
08:14Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO
Published on: July 31, 2016
14:16Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Related Concept Videos
Trends in Lattice Energy: Ion Size and Charge
Valence Bond Theory
Radical Oxidation of Allylic and Benzylic Alcohols
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...