Mask structure optimization for beyond EUV lithography

Beyond extreme ultraviolet (BEUV) lithography with a 6 × nm wavelength is regarded as a future technique to continue the pattern shirking in integrated circuit (IC) manufacturing. This work proposes an optimization method for the mask structure to improve the imaging quality of BEUV lithography. Firstly, the structure of mask multilayers is optimized to maximize its reflection coefficient. Then, a mask diffraction near-field (DNF) model is established based on the Born series algorithm, and the aerial image of BEUV lithography system can be further calculated. Additionally, the mask absorber structure is inversely designed using the particle swarm optimization (PSO) algorithm. Simulation results show a significant improvement of the BEUV lithography imaging obtained by the proposed optimization methods. The proposed workflow can also be expanded to areas of EUV and soft x ray imaging.