High-Performance 2D Ambipolar MoTe₂ Lateral Memristors by Mild Oxidation

Area of Science:

• Materials Science
• Nanotechnology
• Electronics

Background:

• 2D transition metal dichalcogenides (TMDCs) are key materials for memristors in brain-inspired computing.
• Oxidation typically degrades TMDCs, but its effect on ambipolar TMDCs' resistive switching is not fully understood.

Purpose of the Study:

• To investigate the impact of mild oxidation on the resistive switching behavior of 2D ambipolar TMDCs.
• To develop a strategy for enhancing memristive performance using controlled oxidation.

Main Methods:

• A mild oxidation strategy was applied to 2H-molybdenum ditelluride (MoTe2) lateral memristors.
• Resistive switching characteristics, doping effects, and gate voltage distribution were analyzed.
• Device performance was evaluated for artificial synapse applications, including long-term potentiation/depression and handwritten digit recognition.

Main Results:

• Mild oxidation increased the resistive switching ratio of 2H-MoTe2 memristors by over 10 times.
• Enhanced doping from O2 and H2O adsorption and optimized gate voltage distribution contributed to improved performance.
• The ambipolarity of 2H-MoTe2 allowed for a reversible change in resistive switching direction.

Conclusions:

• Controlled oxidation is a viable method to significantly enhance the memristive properties of 2D ambipolar materials.
• The study provides insights into the mechanisms underlying resistive switching in oxidized 2D materials.
• The developed MoTe2 memristors show promise as artificial synapses for neuromorphic computing applications.